AOU4S60 MOSFET PDF: N-Ch, 600V, 4A. Datasheet. Full specification with pinout and replacement list

AOU4S60 Specs and Replacement

   Type Designator: AOU4S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-251

AOU4S60 substitution

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AOU4S60 datasheet

..1. Size:451K aosemi
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AOD4S60/AOI4S60/AOU4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS(o... See More ⇒

..2. Size:274K inchange semiconductor
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isc N-Channel MOSFET Transistor AOU4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

Detailed specifications: AOTF9N70 , AOTF9N90 , AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , IRLB3034 , AOU7S65 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 .