All MOSFET. AOV20S60 Datasheet

 

AOV20S60 Datasheet and Replacement


   Type Designator: AOV20S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: DFN8X8
 

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AOV20S60 Datasheet (PDF)

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AOV20S60

AOV20S60 TM600V 18A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOV20S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 80Ahigh levels of performance and robustness in switching RDS(ON),max 0.25applications. Qg,typ 20nCBy providing low RDS(on), Qg and EOSS along with Eo

Datasheet: AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , AOU7S65 , AOV11S60 , AOV15S60 , IRF9640 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 , AOW11S65 , AOW12N50 , AOW12N60 .

History: SSM3J35MFV | NP84N04KHE | NP82N04NDG | NTGD3148NT1G | RT1A040ZPTR | 2SK1746 | JCS7N95FA

Keywords - AOV20S60 MOSFET datasheet

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