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AOV20S60 Specs and Replacement

Type Designator: AOV20S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: DFN8X8

AOV20S60 substitution

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AOV20S60 datasheet

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 aov20s60.pdf pdf_icon

AOV20S60

AOV20S60 TM 600V 18A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOV20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.25 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo... See More ⇒

Detailed specifications: AOU2N60A, AOU3N50, AOU3N60, AOU4N60, AOU4S60, AOU7S65, AOV11S60, AOV15S60, K2611, AOW10N60, AOW10N65, AOW10T60P, AOW11N60, AOW11S60, AOW11S65, AOW12N50, AOW12N60

Keywords - AOV20S60 MOSFET specs

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