All MOSFET. HUF75307D3ST Datasheet

 

HUF75307D3ST MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUF75307D3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252AA

 HUF75307D3ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF75307D3ST Datasheet (PDF)

 6.1. Size:170K  fairchild semi
huf75307t3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

 7.1. Size:180K  fairchild semi
huf75309t3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE M

 8.1. Size:235K  fairchild semi
huf75321p3 huf75321s3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75321P3, HUF75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves the

 8.2. Size:660K  fairchild semi
huf75329d3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured using Simulation Modelsthe innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Modelssilicon area, resulting in ou

 8.3. Size:430K  fairchild semi
huf75344a3.pdf

HUF75307D3ST HUF75307D3ST

October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan

 8.4. Size:205K  fairchild semi
huf75343.pdf

HUF75307D3ST HUF75307D3ST

HUF75343G3, HUF75343P3, HUF75343S3SData Sheet December 200175A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and SABER Mode

 8.5. Size:280K  fairchild semi
huf75343s3 huf75343s3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75343G3, HUF75343P3, HUF75343S3,HUF75343S3SData Sheet March 200375A, 55V, 0.009 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance PSPICE and

 8.6. Size:225K  fairchild semi
huf75329d3-s.pdf

HUF75307D3ST HUF75307D3ST

HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the

 8.7. Size:331K  fairchild semi
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf

HUF75307D3ST HUF75307D3ST

HUF75333G3, HUF75333P3, HUF75333S3S,HUF75333S3Data Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impeda

 8.8. Size:226K  fairchild semi
huf75337g3 huf75337p3 huf75337s3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75337G3, HUF75337P3, HUF75337S3SData Sheet December 200175A, 55V, 0.014 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 8.9. Size:305K  fairchild semi
huf75332s3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet January 200560A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models a

 8.10. Size:252K  fairchild semi
huf75329g3 huf75329p3 huf75329s3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75329G3, HUF75329P3, HUF75329S3SData Sheet December 200149A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on t

 8.11. Size:326K  fairchild semi
huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf

HUF75307D3ST HUF75307D3ST

HUF75345G3, HUF75345P3, HUF75345S3SData Sheet December 200975A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models

 8.12. Size:308K  fairchild semi
huf75339g3 huf75339p3 huf75339s3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75339G3, HUF75339P3, HUF75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 8.13. Size:588K  onsemi
huf75345g3 huf75345p3 huf75345s3s.pdf

HUF75307D3ST HUF75307D3ST

MOSFET Power, N-Channel,UltraFET55 V, 75 A, 7 mWHUF75345G3, HUF75345P3,HUF75345S3Swww.onsemi.comDescriptionThese N-Channel power MOSFETs are manufactured usingVDSS RDS(ON) MAX ID MAXthe innovative UltraFET process. This advanced process technology55 V 7 mW 75 Aachieves the lowest possible on-resistance per silicon area, resultingin outstanding performance. This devic

 8.14. Size:827K  onsemi
huf75332p3.pdf

HUF75307D3ST HUF75307D3ST

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.15. Size:715K  onsemi
huf75329d3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFETFeatures55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on-Modelsresistance per silicon area, resulting in o

 8.16. Size:803K  onsemi
huf75339p3.pdf

HUF75307D3ST HUF75307D3ST

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.17. Size:785K  onsemi
huf75321p3.pdf

HUF75307D3ST HUF75307D3ST

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.18. Size:380K  onsemi
huf75344g3 huf75344p3.pdf

HUF75307D3ST HUF75307D3ST

HUF75344G3, HUF75344P3Data Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 75 A, 8 m 75A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABERprocess technology achieves the lowest possible on-Modelsresistance per silicon area, result

 8.19. Size:122K  harris semi
huf75337s3.pdf

HUF75307D3ST HUF75307D3ST

HUF75337G3, HUF75337P3,S E M I C O N D U C T O RHUF75337S3, HUF75337S3S62A, 55V, 0.014 Ohm, N-ChannelUltraFET Power MOSFETsJanuary 1998Features Description 62A, 55V These N-Channel power MOS-FETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.014the innovative UltraFET pro-cess. This advanced process technology achieves the low- Diode Exhibits

 8.20. Size:142K  intersil
huf75344.pdf

HUF75307D3ST HUF75307D3ST

HUF75344G3, HUF75344P3, HUF75344S3SData Sheet January 2000 File Number 4402.775A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- Thermal Impedance PSPICE and S

 8.21. Size:214K  intersil
huf75332.pdf

HUF75307D3ST HUF75307D3ST

HUF75332G3, HUF75332P3, HUF75332S3SData Sheet June 1999 File Number 4489.360A, 55V, 0.019 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 60A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- SPICE and SABER Thermal Impedance

 8.22. Size:798K  cn vbsemi
huf75321d3s.pdf

HUF75307D3ST HUF75307D3ST

HUF75321D3Swww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 8.23. Size:254K  inchange semiconductor
huf75345s3st.pdf

HUF75307D3ST HUF75307D3ST

INCHANGE Semiconductorisc N-Channel MOSFET Transistor HUF75345S3STDESCRIPTIONDrain Current: I = 75A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM

Datasheet: HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N , HUF75229P3 , HUF75307D3 , HUF75307D3S , 2SK3568 , HUF75307P3 , HUF75307T3ST , HUF75309D3 , HUF75309D3S , HUF75309D3ST , HUF75309P3 , HUF75309T3ST , HUF75321D3 .

 

 
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