All MOSFET. AOY2N60 Datasheet

 

AOY2N60 Datasheet and Replacement


   Type Designator: AOY2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: TO-251B
 

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AOY2N60 Datasheet (PDF)

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AOY2N60

AOY2N60600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

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AOY2N60

isc N-Channel MOSFET Transistor AOY2N60FEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , AOWF7S65 , AOWF8N50 , AOWF9N70 , IRFB3607 , AOY423 , AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR , 2SK3515-01MR .

History: KQB2N80 | FDMC8010ET30

Keywords - AOY2N60 MOSFET datasheet

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