All MOSFET. APT10026L2FL Datasheet

 

APT10026L2FL Datasheet and Replacement


   Type Designator: APT10026L2FL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 294 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO264MAX
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APT10026L2FL Datasheet (PDF)

 ..1. Size:65K  apt
 apt10026l2fl.pdf pdf_icon

APT10026L2FL

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

 0.1. Size:65K  apt
 apt10026l2fll.pdf pdf_icon

APT10026L2FL

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed

 0.2. Size:102K  apt
 apt10026l2fllg.pdf pdf_icon

APT10026L2FL

APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

 4.1. Size:64K  apt
 apt10026l2ll.pdf pdf_icon

APT10026L2FL

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

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History: APT5030AN | HM3018JR | QM6008P

Keywords - APT10026L2FL MOSFET datasheet

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