APT10026L2FL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT10026L2FL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 890 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 1270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: TO264MAX
- подбор MOSFET транзистора по параметрам
APT10026L2FL Datasheet (PDF)
apt10026l2fl.pdf

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed
apt10026l2fll.pdf

APT10026L2FLL1000V 38A 0.260WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speed
apt10026l2fllg.pdf

APT10026L2FLL1000V 38A 0.260R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
apt10026l2ll.pdf

APT10026L2LL1000V 38A 0.260WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BRF60R580C | R6535KNZ1 | STP12NK80Z | VSE002N03MS-G | SM4840PRL | IXFM35N30 | 2SK3430-ZJ
History: BRF60R580C | R6535KNZ1 | STP12NK80Z | VSE002N03MS-G | SM4840PRL | IXFM35N30 | 2SK3430-ZJ



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