APT10078BFLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10078BFLL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 400
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 410
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.78
Ohm
Package:
TO247
APT10078BFLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10078BFLL
Datasheet (PDF)
..1. Size:71K apt
apt10078bfll.pdf
APT10078BFLLAPT10078SFLL1000V 14A 0.780WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally
0.1. Size:203K apt
apt10078bfllg apt10078sfllg.pdf
APT10078BFLLAPT10078SFLL1000V 14A 0.780BFLLRFREDFET POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching los
5.1. Size:69K apt
apt10078bll.pdf
APT10078BLLAPT10078SLL1000V 14A 0.780WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchi
5.2. Size:161K apt
apt10078bllg apt10078sllg.pdf
APT10078BLLAPT10078SLL1000V 14A 0.780R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with e
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