All MOSFET. APT10M30AVR Datasheet

 

APT10M30AVR Datasheet and Replacement


   Type Designator: APT10M30AVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO3
 

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APT10M30AVR Datasheet (PDF)

 ..1. Size:66K  apt
apt10m30avr.pdf pdf_icon

APT10M30AVR

APT10M30AVR100V 65A 0.030POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower Leakag

 8.1. Size:117K  apt
apt10m07jvfr.pdf pdf_icon

APT10M30AVR

APT10M07JVFR100V 225A 0.007POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast R

 8.2. Size:73K  apt
apt10m07.pdf pdf_icon

APT10M30AVR

APT10M07JVR100V 225A 0.007POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 8.3. Size:38K  apt
apt10m09b2vr.pdf pdf_icon

APT10M30AVR

APT10M09B2VRAPT10M09LVR100V 100A 0.009WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

Datasheet: APT10086BLC , APT10086SLC , APT10090BFLL , APT10090SFLL , APT10090BLL , APT10090SLL , APT10M09B2VFR , APT10M09B2VR , IRF640 , APT11N80BC3 , APT11N80KC3 , APT1201R2BLL , APT1201R2SLL , APT1201R4BLL , APT1201R4SLL , APT1201R5BVFR , APT1201R5SVFR .

History: FDD24AN06LF085 | LS3956 | APT10086BVR

Keywords - APT10M30AVR MOSFET datasheet

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