APT12040L2LL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT12040L2LL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 890
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package: TO264MAX
APT12040L2LL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT12040L2LL
Datasheet (PDF)
..1. Size:64K apt
apt12040l2ll.pdf 
APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
4.1. Size:101K apt
apt12040l2fllg.pdf
APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
6.1. Size:207K apt
apt12040jvr.pdf
APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
6.2. Size:69K apt
apt12040jll.pdf
APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
6.3. Size:108K apt
apt12040jfll.pdf
APT12040JFLL1200V 24A 0.400R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized"ISOTOPalong with e
6.4. Size:121K apt
apt12040jvfr.pdf
APT12040JVFR1200V 26A 0.400 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faste
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