APT12040L2LL. Аналоги и основные параметры
Наименование производителя: APT12040L2LL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 890 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 1200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO264MAX
Аналог (замена) для APT12040L2LL
- подборⓘ MOSFET транзистора по параметрам
APT12040L2LL даташит
apt12040l2ll.pdf
APT12040L2LL 1200V 30A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent
apt12040l2fllg.pdf
APT12040L2FLL 1200V 30A 0.400 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
apt12040jvr.pdf
APT12040JVR 1200V 26A 0.400W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T
apt12040jll.pdf
APT12040JLL 1000V 24A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
Другие MOSFET... APT1201R4BLL , APT1201R4SLL , APT1201R5BVFR , APT1201R5SVFR , APT1201R6BVFR , APT12031JLL , APT12040JLL , APT12040JVFR , IRFB4115 , APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , APT12067B2LL , APT12067JLL .
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Список транзисторов
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