All MOSFET. APT20M18B2VFR Datasheet

 

APT20M18B2VFR Datasheet and Replacement


   Type Designator: APT20M18B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 2270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TMAX
 

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APT20M18B2VFR Datasheet (PDF)

 ..1. Size:39K  apt
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APT20M18B2VFR

APT20M18B2VFRAPT20M18LVFR200V 100A 0.018WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 ..2. Size:375K  inchange semiconductor
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APT20M18B2VFR

isc N-Channel MOSFET Transistor APT20M18B2VFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 0.1. Size:152K  apt
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APT20M18B2VFR

APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 3.1. Size:159K  apt
apt20m18b2vrg apt20m18lvrg.pdf pdf_icon

APT20M18B2VFR

APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV

Datasheet: APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL , 2SK3568 , APT20M18B2VR , APT20M20B2FLL , APT20M20B2LL , APT20M20JFLL , APT20M20JLL , APT20M34BFLL , APT20M34BLL , APT20M36BFLL .

History: SIHA21N60EF | IRF7324 | SRM7N65 | IRLU2905Z

Keywords - APT20M18B2VFR MOSFET datasheet

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