APT20M18B2VFR PDF and Equivalents Search

 

APT20M18B2VFR PDF Specs and Replacement


   Type Designator: APT20M18B2VFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 2270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TMAX
 

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APT20M18B2VFR PDF Specs

 ..1. Size:39K  apt
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APT20M18B2VFR

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒

 ..2. Size:375K  inchange semiconductor
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APT20M18B2VFR

isc N-Channel MOSFET Transistor APT20M18B2VFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.018 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 0.1. Size:152K  apt
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APT20M18B2VFR

APT20M18B2VFR A20M18LVFR 200V 100A 0.018 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.... See More ⇒

 3.1. Size:159K  apt
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APT20M18B2VFR

APT20M18B2VR A20M18LVR 200V 100A 0.018 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LV... See More ⇒

Detailed specifications: APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL , APT20M16B2FLL , APT20M16B2LL , 4435 , APT20M18B2VR , APT20M20B2FLL , APT20M20B2LL , APT20M20JFLL , APT20M20JLL , APT20M34BFLL , APT20M34BLL , APT20M36BFLL .

Keywords - APT20M18B2VFR MOSFET specs

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