APT20M18B2VFR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M18B2VFR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 330
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 2270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
TMAX
APT20M18B2VFR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M18B2VFR
Datasheet (PDF)
..1. Size:39K apt
apt20m18b2vfr.pdf 
APT20M18B2VFRAPT20M18LVFR200V 100A 0.018WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
..2. Size:375K inchange semiconductor
apt20m18b2vfr.pdf
isc N-Channel MOSFET Transistor APT20M18B2VFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
0.1. Size:152K apt
apt20m18b2vfrg apt20m18lvfrg.pdf
APT20M18B2VFRA20M18LVFR200V 100A 0.018B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
3.1. Size:159K apt
apt20m18b2vrg apt20m18lvrg.pdf
APT20M18B2VRA20M18LVR200V 100A 0.018B2VR POWER MOS V MOSFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LV
3.2. Size:38K apt
apt20m18b2vr.pdf
APT20M18B2VRAPT20M18LVR200V 100A 0.018WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
3.3. Size:376K inchange semiconductor
apt20m18b2vr.pdf
isc N-Channel MOSFET Transistor APT20M18B2VRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.018(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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