All MOSFET. APT6013B2FLL Datasheet

 

APT6013B2FLL MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT6013B2FLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 565 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 129 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TMAX

 APT6013B2FLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT6013B2FLL Datasheet (PDF)

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 apt6013b2fll.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2FLLAPT6013LFLL600V 43A 0.130WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 ..2. Size:376K  inchange semiconductor
 apt6013b2fll.pdf

APT6013B2FLL APT6013B2FLL

isc N-Channel MOSFET Transistor APT6013B2FLLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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 apt6013b2fllg apt6013lfllg.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2FLLAPT6013LFLL600V 43A 0.130B2FLLR POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

 5.1. Size:69K  apt
 apt6013b2ll.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2LLAPT6013LLL600V 43A 0.130WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.2. Size:200K  apt
 apt6013b2llg apt6013lllg.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2LLAPT6013LLL600V 43A 0.130B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 5.3. Size:376K  inchange semiconductor
 apt6013b2ll.pdf

APT6013B2FLL APT6013B2FLL

isc N-Channel MOSFET Transistor APT6013B2LLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: APT5560AN , APT6010B2LL , APT6010JFLL , APT6010JLL , APT6011B2VFR , APT6011B2VR , APT6011LVFR , APT6011LVR , P55NF06 , APT6013B2LL , APT6013JFLL , APT6013JLL , APT6015LVFR , APT6017B2FLL , APT6017B2LL , APT6017JFLL , APT6017JLL .

History: STV7NA40 | 2N7002BKV

 

 
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