Справочник MOSFET. APT6013B2FLL

 

APT6013B2FLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT6013B2FLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 565 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 43 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 129 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 1010 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: TMAX

 Аналог (замена) для APT6013B2FLL

 

 

APT6013B2FLL Datasheet (PDF)

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 apt6013b2fll.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2FLLAPT6013LFLL600V 43A 0.130WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 ..2. Size:376K  inchange semiconductor
 apt6013b2fll.pdf

APT6013B2FLL APT6013B2FLL

isc N-Channel MOSFET Transistor APT6013B2FLLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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 apt6013b2fllg apt6013lfllg.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2FLLAPT6013LFLL600V 43A 0.130B2FLLR POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

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 apt6013b2ll.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2LLAPT6013LLL600V 43A 0.130WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

 5.2. Size:200K  apt
 apt6013b2llg apt6013lllg.pdf

APT6013B2FLL APT6013B2FLL

APT6013B2LLAPT6013LLL600V 43A 0.130B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 5.3. Size:376K  inchange semiconductor
 apt6013b2ll.pdf

APT6013B2FLL APT6013B2FLL

isc N-Channel MOSFET Transistor APT6013B2LLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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