HUF75329P3 Specs and Replacement
Type Designator: HUF75329P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO220
HUF75329P3 substitution
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HUF75329P3 datasheet
huf75329g3 huf75329p3 huf75329s3s.pdf
HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on t... See More ⇒
huf75329d3st.pdf
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured using Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou... See More ⇒
huf75329d3-s.pdf
HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the... See More ⇒
huf75329d3s.pdf
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 m 20A, 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, resulting in o... See More ⇒
Detailed specifications: HUF75321D3ST , HUF75321P3 , HUF75321S3 , HUF75321S3S , HUF75321S3ST , HUF75329D3 , HUF75329D3S , HUF75329G3 , NCEP15T14 , HUF75329S3 , HUF75329S3S , HUF75329S3ST , HUF75332G3 , HUF75332P3 , HUF75332S3S , HUF75333G3 , HUF75333P3 .
Keywords - HUF75329P3 MOSFET specs
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