APT6035BVFR Specs and Replacement

Type Designator: APT6035BVFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 403 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO247

APT6035BVFR substitution

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APT6035BVFR datasheet

 ..1. Size:116K  apt
apt6035bvfr.pdf pdf_icon

APT6035BVFR

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

 0.1. Size:117K  apt
apt6035bvfrg apt6035svfrg.pdf pdf_icon

APT6035BVFR

APT6035BVFR APT6035SVFR 600V 18A 0.350 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR... See More ⇒

 5.1. Size:62K  apt
apt6035bvr.pdf pdf_icon

APT6035BVFR

APT6035BVR 600V 18A 0.350 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 5.2. Size:376K  inchange semiconductor
apt6035bvr.pdf pdf_icon

APT6035BVFR

isc N-Channel MOSFET Transistor APT6035BVR FEATURES Drain Current I =18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: APT6025BVFR, APT6025SVFR, APT6025SVR, APT6029BFLL, APT6029BLL, APT6030BVFR, APT6030SVFR, APT6030SVR, IRF9540N, APT6038BFLL, APT6038BLL, APT6040BVFR, APT6040BVR, APT6060BNR, APT60M60JFLL, APT60M60JLL, APT60M75JFLL

Keywords - APT6035BVFR MOSFET specs

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