All MOSFET. STU35N10 Datasheet

 

STU35N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU35N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 231 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO252 DPAK

 STU35N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU35N10 Datasheet (PDF)

 ..1. Size:128K  samhop
 stu35n10 std35n10.pdf

STU35N10 STU35N10

STU35N10GreenProductSTD35N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.21 @ VGS=10VTO-252 and TO-251 Package.100V 35A30 @ VGS=4.5V GSSTU SERIES STD SERIES( ) ( )TO - 252AA D- PAK TO -

 9.1. Size:120K  samhop
 stu35l01a std35l01a.pdf

STU35N10 STU35N10

GreenProductSTU/D35L01AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 35A 20 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA

 9.2. Size:107K  samhop
 stu35l01 std35l01.pdf

STU35N10 STU35N10

rerrPPrPrProSTU/D35L01aS mHop Microelectronics C orp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.35A100V 24 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I

 9.3. Size:111K  samhop
 stu35l01ha std35l01ha.pdf

STU35N10 STU35N10

GrerrPPrPrProSTU/D35L01HAaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 35A 20 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF9511

 

 
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