All MOSFET. STU339S Datasheet

 

STU339S MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU339S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 161 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO252 DPAK

 STU339S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU339S Datasheet (PDF)

 ..1. Size:149K  samhop
stu339s std339s.pdf

STU339S
STU339S

GrerrPPrPrProSTU/D339SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.9.6 @ VGS=10VTO-252 and TO-251 Package.40A30V15 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

 9.1. Size:102K  samhop
stu330s std330s.pdf

STU339S
STU339S

STU/D330SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.30V 20A38 @ VGS=4.5VGSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAK(TA=25C unless o

 9.2. Size:149K  samhop
stu336s std336s.pdf

STU339S
STU339S

GrerrPPrPrProSTU/D336SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.5.6 @ VGS=10VTO-252 and TO-251 Package.55A30V9 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (

 9.3. Size:149K  samhop
stu334s std334s.pdf

STU339S
STU339S

GrerrPPrPrProSTU/D334SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.4.7 @ VGS=10VTO-252 and TO-251 Package.60A30V6.8 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTPF190N65S3HF | BUK555-100A | 2SK3414LS

 

 
Back to Top