STU25L01 Specs and Replacement
Type Designator: STU25L01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
STU25L01 substitution
- MOSFET ⓘ Cross-Reference Search
STU25L01 datasheet
stu25l01.pdf
Gre r r P Pr Pr Pro STU25L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 35 @ VGS=10V TO-252 Package. 100V 25A 45 @ VGS=4.5V G G S S STU SERIES ( ) TO - 252AA D- PAK (TC=25 C unless otherwis... See More ⇒
Detailed specifications: STU35L01A, STU35L01, STU339S, STU336S, STU334S, STU330S, STU328S, STU302S, IRFP460, STU2455PLS, STU2240NL, STU20N15, STU20L01A, STU20L01, STU2030PLS, STU1955NL, STU1855PL
Keywords - STU25L01 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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