All MOSFET. STT10L01 Datasheet

 

STT10L01 Datasheet and Replacement


   Type Designator: STT10L01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT223
 

 STT10L01 substitution

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STT10L01 Datasheet (PDF)

 ..1. Size:188K  samhop
 stt10l01.pdf pdf_icon

STT10L01

GreenProductSTT10L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.140 @ VGS=10VSurface Mount Package.3A100V225 @ VGS=4.5VDGGSSTT SERIESSSOT - 223(TA=25C unless otherwise noted)

 9.1. Size:133K  samhop
 stt100.pdf pdf_icon

STT10L01

GreenProductSTT100aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.819 @ VGS=10VSuface Mount Package.100V 1.2A956 @ VGS=4.5V ESD Protected.D G GSSTT SERIESS SOT - 223ABSOLUTE MAXIMUM RATINGS (TA=25

Datasheet: STU1955NL , STU1855PL , STT600 , STT468A , STT4660 , STT432S , STT3418 , STT3414 , IRFB4115 , STT100 , STT08L01 , STT06L01 , STT04N20 , STS8235 , STS8217 , STS8216 , STS8215 .

History: APQ84SN06A | IXFT30N60X

Keywords - STT10L01 MOSFET datasheet

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