STT06L01 Specs and Replacement
Type Designator: STT06L01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
Package: SOT223
STT06L01 substitution
- MOSFET ⓘ Cross-Reference Search
STT06L01 datasheet
stt06l01.pdf
Green Product STT06L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 220 @ VGS=10V Surface Mount Package. 100V 3A 260 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒
Detailed specifications: STT468A, STT4660, STT432S, STT3418, STT3414, STT10L01, STT100, STT08L01, IRFP250N, STT04N20, STS8235, STS8217, STS8216, STS8215, STS8213, STS8212, STS8207
Keywords - STT06L01 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP2R803GS-HF | BSZ037N06LS5
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