All MOSFET. STT06L01 Datasheet

 

STT06L01 Datasheet and Replacement


   Type Designator: STT06L01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.295 Ohm
   Package: SOT223
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STT06L01 Datasheet (PDF)

 ..1. Size:132K  samhop
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STT06L01

GreenProductSTT06L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.220 @ VGS=10VSurface Mount Package.100V 3A260 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCPF7N60YDTU | BL2N60-U | IRFP352R | TPW60R080M

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