STS8217 MOSFET Datasheet: N-Ch, 24V, 7A. Full specification with pinout and replacement list

STS8217 Specs and Replacement

Type Designator: STS8217

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71.2 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: TSOT26

STS8217 substitution

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STS8217 datasheet

..1. Size:105K samhop
sts8217.pdf pdf_icon

Gre r r P Pr Pr Pro STS8217 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.5 @ VGS=4.0V Suface Mount Package. 17 @ VGS=3.7V 24V 7A ESD Protected. 18 @ VGS=3.1V 27 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒

8.1. Size:179K samhop
sts8216.pdf pdf_icon

Green Product STS8216 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 6A 27 @ VGS=2.5V ESD Protected. D1 D2 SOT 26 Top View S1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒

8.2. Size:106K samhop
sts8215.pdf pdf_icon

Gre r r P Pr Pr Pro STS8215 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 24.5 @ VGS=4.5V Suface Mount Package. 25.5 @ VGS=4.0V ESD Protected. 20V 5.5A 27.5 @ VGS=3.7V 30.5 @ VGS=3.1V 36.5 @ VGS=2.5V D1 D... See More ⇒

8.3. Size:111K samhop
sts8213.pdf pdf_icon

Green Product STS8213 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.0 @ VGS=4.0V Suface Mount Package. 16.5 @ VGS=3.7V 20V 7A ESD Protected. 18.0 @ VGS=3.1V 22.0 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒