STS3419 MOSFET Datasheet: P-Ch, 30V, 3.8A. Full specification with pinout and replacement list

STS3419 Specs and Replacement

Type Designator: STS3419

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23

STS3419 substitution

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STS3419 datasheet

..1. Size:109K samhop
sts3419.pdf pdf_icon

Green Product STS3419 a S mHop Microelectronics C orp. Ver 2.2 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 65 @ VGS=-10V Suface Mount Package. -30V -3.8A 90 @ VGS=-4.5V Halogen free. D SOT-23 D G S G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless oth... See More ⇒

8.1. Size:168K samhop
sts3414.pdf pdf_icon

Green Product STS3414 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 50 @ VGS=10V 30V 4A 60 @ VGS=4.5V SOT-23 package. 75 @ VGS=2.5V D S OT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol... See More ⇒

8.2. Size:88K samhop
sts3417.pdf pdf_icon

Gr P Pr P P STS3417 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 96 @ VGS=-4.5V Suface Mount Package. 100 @ VGS=-4.0V -30V -3A 103 @ VGS=-3.7V ESD Protected. 111 @ VGS=-3.1V 123 @ VGS=-2.5V D SOT-23 G D S ... See More ⇒

8.3. Size:94K samhop
sts3415.pdf pdf_icon

Gr P Pr P P STS3415 a S mHop Microelectronics C orp. Ver 2.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 46 @ VGS=-4.5V Suface Mount Package. 47 @ VGS=-4.0V ESD Protected. 49 @ VGS=-3.7V -20V -4.2A 54 @ VGS=-3.1V 61 @ VGS=-2.5V D SOT-23 G D S G... See More ⇒