STS3415 MOSFET Datasheet: P-Ch, 20V, 4.2A. Full specification with pinout and replacement list

STS3415 Specs and Replacement

Type Designator: STS3415

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 225 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOT23

STS3415 substitution

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STS3415 datasheet

..1. Size:94K samhop
sts3415.pdf pdf_icon

Gr P Pr P P STS3415 a S mHop Microelectronics C orp. Ver 2.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 46 @ VGS=-4.5V Suface Mount Package. 47 @ VGS=-4.0V ESD Protected. 49 @ VGS=-3.7V -20V -4.2A 54 @ VGS=-3.1V 61 @ VGS=-2.5V D SOT-23 G D S G... See More ⇒

..2. Size:920K cn vbsemi
sts3415.pdf pdf_icon

STS3415 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)... See More ⇒

8.1. Size:168K samhop
sts3414.pdf pdf_icon

Green Product STS3414 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 50 @ VGS=10V 30V 4A 60 @ VGS=4.5V SOT-23 package. 75 @ VGS=2.5V D S OT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol... See More ⇒

8.2. Size:88K samhop
sts3417.pdf pdf_icon

Gr P Pr P P STS3417 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 96 @ VGS=-4.5V Suface Mount Package. 100 @ VGS=-4.0V -30V -3A 103 @ VGS=-3.7V ESD Protected. 111 @ VGS=-3.1V 123 @ VGS=-2.5V D SOT-23 G D S ... See More ⇒