STS3415 - аналоги, параметры транзистора - Справочник транзисторов

STS3415 даташит

..1. Size:94K samhop
sts3415.pdf pdf_icon

Gr P Pr P P STS3415 a S mHop Microelectronics C orp. Ver 2.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 46 @ VGS=-4.5V Suface Mount Package. 47 @ VGS=-4.0V ESD Protected. 49 @ VGS=-3.7V -20V -4.2A 54 @ VGS=-3.1V 61 @ VGS=-2.5V D SOT-23 G D S G

..2. Size:920K cn vbsemi
sts3415.pdf pdf_icon

STS3415 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23)

8.1. Size:168K samhop
sts3414.pdf pdf_icon

Green Product STS3414 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 50 @ VGS=10V 30V 4A 60 @ VGS=4.5V SOT-23 package. 75 @ VGS=2.5V D S OT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol

8.2. Size:88K samhop
sts3417.pdf pdf_icon

Gr P Pr P P STS3417 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 96 @ VGS=-4.5V Suface Mount Package. 100 @ VGS=-4.0V -30V -3A 103 @ VGS=-3.7V ESD Protected. 111 @ VGS=-3.1V 123 @ VGS=-2.5V D SOT-23 G D S