All MOSFET. HUF75337P3 Datasheet

 

HUF75337P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75337P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 175 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 91 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO220AB

HUF75337P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF75337P3 Datasheet (PDF)

1.1. huf75337g3 huf75337p3 huf75337s3s.pdf Size:226K _fairchild_semi

HUF75337P3 HUF75337P3

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

2.1. huf75337s3.pdf Size:122K _update_mosfet

HUF75337P3 HUF75337P3

HUF75337G3, HUF75337P3, S E M I C O N D U C T O R HUF75337S3, HUF75337S3S 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V These N-Channel power MOS- FETs are manufactured using • Ultra Low On-Resistance, rDS(ON) = 0.014Ω the innovative UltraFET™ pro- cess. This advanced process technology achieves the low- • Diode Exhibits

 3.1. huf75332s3st.pdf Size:305K _update_mosfet

HUF75337P3 HUF75337P3

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

3.2. huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf Size:331K _fairchild_semi

HUF75337P3 HUF75337P3

HUF75333G3, HUF75333P3, HUF75333S3S, HUF75333S3 Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 3.3. huf75339g3 huf75339p3 huf75339s3s.pdf Size:308K _fairchild_semi

HUF75337P3 HUF75337P3

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves th

3.4. huf75332.pdf Size:214K _intersil

HUF75337P3 HUF75337P3

HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 File Number 4489.3 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs • 60A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - SPICE and SABER Thermal Impedance

Datasheet: HUF75332P3 , HUF75332S3S , HUF75333G3 , HUF75333P3 , HUF75333S3 , HUF75333S3S , HUF75333S3ST , HUF75337G3 , IRF460 , HUF75337S3S , HUF75339G3 , HUF75339P3 , HUF75339S3 , HUF75339S3S , HUF75339S3ST , HUF75343G3 , HUF75343P3 .

 

 
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