All MOSFET. STM6960A Datasheet

 

STM6960A MOSFET. Datasheet pdf. Equivalent


   Type Designator: STM6960A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: SO-8

 STM6960A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STM6960A Datasheet (PDF)

 ..1. Size:100K  samhop
 stm6960a.pdf

STM6960A STM6960A

GreenrrPPrPrProdSTM6960AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.71 @ VGS=10VSuface Mount Package.60V 4A92 @ VGS=4.5V5 4 G 2D26 3D2 S 27 2D1 G 1SO-8D1 8 1S 11(TA=25C un

 7.1. Size:112K  samhop
 stm6960.pdf

STM6960A STM6960A

GreenProductSTM6960aS mHop Microelectronics C orp.Ver 1.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.55 @ VGS=10VSuface Mount Package.60V 5.5A70 @ VGS=4.5VD25 4G26 3D2 S2D1 7 2G1SO-88 1D1 S11(TA=25C unless otherwise

 8.1. Size:169K  samhop
 stm6967.pdf

STM6960A STM6960A

GreenProductSTM6967aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.86 @ VGS=-10VSuface Mount Package.-60V -4A125 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABS

 8.2. Size:91K  samhop
 stm6968.pdf

STM6960A STM6960A

S TM6968S amHop Microelectronics C orp.Nov 12.2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V60V 5A Surface Mount Package.70 @ VGS =4.5VESD Protected.D1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE

 8.3. Size:137K  samhop
 stm6962.pdf

STM6960A STM6960A

GreenProductSTM6962SamHop Microelectronics Corp.Aug 29.2006Dual N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.36 @ VGS = 10V60V 6.5ASurface Mount Package.42 @ VGS = 4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS

 8.4. Size:182K  samhop
 stm6966.pdf

STM6960A STM6960A

GreenProductSTM6966aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.80 @ VGS=10VSuface Mount Package.60V 4.5A110 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherw

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PK516BA

 

 
Back to Top