STM6960A - аналоги, параметры транзистора - Справочник транзисторов

STM6960A даташит

..1. Size:100K samhop
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Green r r P Pr Pr Prod STM6960A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 71 @ VGS=10V Suface Mount Package. 60V 4A 92 @ VGS=4.5V 5 4 G 2 D2 6 3 D2 S 2 7 2 D1 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C un

7.1. Size:112K samhop
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Green Product STM6960 a S mHop Microelectronics C orp. Ver 1.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 55 @ VGS=10V Suface Mount Package. 60V 5.5A 70 @ VGS=4.5V D2 5 4 G2 6 3 D2 S2 D1 7 2 G1 SO-8 8 1 D1 S1 1 (TA=25 C unless otherwise

8.1. Size:169K samhop
stm6967.pdf pdf_icon

Green Product STM6967 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 86 @ VGS=-10V Suface Mount Package. -60V -4A 125 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) ABS

8.2. Size:91K samhop
stm6968.pdf pdf_icon

S TM6968 S amHop Microelectronics C orp. Nov 12.2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 60V 5A Surface Mount Package. 70 @ VGS =4.5V ESD Protected. D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE