STM6960A - параметры транзистора MOSFET, его аналоги, datasheet

STM6960A Datasheet (PDF)

..1. Size:100K samhop
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GreenrrPPrPrProdSTM6960AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.71 @ VGS=10VSuface Mount Package.60V 4A92 @ VGS=4.5V5 4 G 2D26 3D2 S 27 2D1 G 1SO-8D1 8 1S 11(TA=25C un

7.1. Size:112K samhop
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GreenProductSTM6960aS mHop Microelectronics C orp.Ver 1.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.55 @ VGS=10VSuface Mount Package.60V 5.5A70 @ VGS=4.5VD25 4G26 3D2 S2D1 7 2G1SO-88 1D1 S11(TA=25C unless otherwise

8.1. Size:169K samhop
stm6967.pdf pdf_icon

GreenProductSTM6967aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.86 @ VGS=-10VSuface Mount Package.-60V -4A125 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABS

8.2. Size:91K samhop
stm6968.pdf pdf_icon

S TM6968S amHop Microelectronics C orp.Nov 12.2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V60V 5A Surface Mount Package.70 @ VGS =4.5VESD Protected.D1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE