STG8810A
MOSFET. Datasheet pdf. Equivalent
Type Designator: STG8810A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.4
nC
trⓘ - Rise Time: 275
nS
Cossⓘ -
Output Capacitance: 159
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145
Ohm
Package:
TSSOP8
STG8810A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STG8810A
Datasheet (PDF)
..1. Size:131K samhop
stg8810a.pdf
GreenProductSTG8810AaS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.5 @ VGS=4.5VSuface Mount Package.15.0 @ VGS=4.0V ESD HBM > 2KV.20V 7A 17.0 @ VGS=3.7V 19.5 @ VGS=3.1V 23.0 @ VGS=2.5V D1 D2 TS S
7.1. Size:122K samhop
stg8810.pdf
GrPPrPPSTG8810aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.18.5 @ VGS=4.5VSuface Mount Package.19.5 @ VGS=4.0VESD HBM > 2KV.20V 7A 20.0 @ VGS=3.7V23.0 @ VGS=3.1V28.5 @ VGS=2.5VD1 D2TS S OP
9.1. Size:131K samhop
stg8820.pdf
GreenProductSTG8820aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20 @ VGS=4.0VSuface Mount Package.20V 7A27 @ VGS=2.5VESD Protected.D1 D2TSSOP1 8D1/D2 D1/D22 7S 1 S 2G 1G 23 6S 1 S 24
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