STE334S Datasheet and Replacement
Type Designator: STE334S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26 nC
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 284 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: DFN5X6
STE334S substitution
STE334S Datasheet (PDF)
ste334s.pdf

GreenProductSTE334SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.7 @ VGS=10V30V 18ASurface Mount Package.8.3 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C
ste339s.pdf

GreenProductSTE339SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.10.5 @ VGS=10V30V 12ASurface Mount Package.15 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C
ste336s.pdf

GreenProductSTE336SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.4.7 @ VGS=10V30V 22ASurface Mount Package.8.7 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C
Datasheet: STG8810 , STG8211 , STF8233 , STF8220 , STF8211 , STF8209A , STF8209 , STE336S , IRF530 , STD628S , STD1955NL , STD12L01A , STC3116E , STC2201 , STC2200 , STB8444 , STB80L60 .
History: NVDD5894NL
Keywords - STE334S MOSFET datasheet
STE334S cross reference
STE334S equivalent finder
STE334S lookup
STE334S substitution
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History: NVDD5894NL



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