All MOSFET. STE334S Datasheet

 

STE334S Datasheet and Replacement


   Type Designator: STE334S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 284 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: DFN5X6
 

 STE334S substitution

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STE334S Datasheet (PDF)

 ..1. Size:88K  samhop
 ste334s.pdf pdf_icon

STE334S

GreenProductSTE334SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.7 @ VGS=10V30V 18ASurface Mount Package.8.3 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C

 9.1. Size:88K  samhop
 ste339s.pdf pdf_icon

STE334S

GreenProductSTE339SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.10.5 @ VGS=10V30V 12ASurface Mount Package.15 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C

 9.2. Size:88K  samhop
 ste336s.pdf pdf_icon

STE334S

GreenProductSTE336SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.4.7 @ VGS=10V30V 22ASurface Mount Package.8.7 @ VGS=4.5V 5 6 7 8PIN 11 2 3 4Power Pak 5 x 6ABSOLUTE MAXIMUM RATINGS (TA=25C

Datasheet: STG8810 , STG8211 , STF8233 , STF8220 , STF8211 , STF8209A , STF8209 , STE336S , 20N50 , STD628S , STD1955NL , STD12L01A , STC3116E , STC2201 , STC2200 , STB8444 , STB80L60 .

Keywords - STE334S MOSFET datasheet

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