SP8008 MOSFET Datasheet: N-Ch, 30V, 28A. Full specification with pinout and replacement list

SP8008 Specs and Replacement

Type Designator: SP8008

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: TSON3.3X3.3

SP8008 substitution

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SP8008 datasheet

..1. Size:112K samhop
sp8008.pdf pdf_icon

Green Product SP8008 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 3.9 @ VGS=10V Suface Mount Package. 30V 28A 4.2 @ VGS=4.5V ESD Protected. 5.2 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3... See More ⇒

9.1. Size:113K samhop
sp8009el.pdf pdf_icon

Green Product SP8009EL a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.0 @ VGS=10V Suface Mount Package. 33V 24A 6.5 @ VGS=6V ESD Protected. D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3 ABSOLUTE MAX... See More ⇒

9.2. Size:114K samhop
sp8006.pdf pdf_icon

Green Product SP8006 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 4.5 @ VGS=4.5V Suface Mount Package. 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected. 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D... See More ⇒

9.3. Size:115K samhop
sp8007.pdf pdf_icon

Green Product SP8007 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 3.8 @ VGS=4.5V Suface Mount Package. 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected. 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V D 5 4 G D 6 3 S 7 2 D S... See More ⇒