SDF03N80 Datasheet and Replacement
Type Designator: SDF03N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220F
SDF03N80 substitution
SDF03N80 Datasheet (PDF)
sdf03n80 sdp03n80.pdf
SDP03N80SDF03N80aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.800V 3.0A 3.3 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M
Datasheet: SP8007 , SP8006 , SDT01N02 , SDM4410 , SDK03N04 , SDF18N50 , SDF08N60 , SDF04N40 , HY1906P , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , FQB46N15 , FQI46N15 .
History: BUK445-400B | SM1A20NSK | NVD5117PL | IRLR110 | KHB9D5N20P | NVD5806N | NVD4C05N
Keywords - SDF03N80 MOSFET datasheet
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History: BUK445-400B | SM1A20NSK | NVD5117PL | IRLR110 | KHB9D5N20P | NVD5806N | NVD4C05N
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