SDF03N80 Specs and Replacement
Type Designator: SDF03N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220F
SDF03N80 substitution
- MOSFET ⓘ Cross-Reference Search
SDF03N80 datasheet
sdf03n80 sdp03n80.pdf
SDP03N80 SDF03N80 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 800V 3.0A 3.3 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒
Detailed specifications: SP8007, SP8006, SDT01N02, SDM4410, SDK03N04, SDF18N50, SDF08N60, SDF04N40, AON7403, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2, FQA19N20C, FQA38N30, FQB46N15, FQI46N15
Keywords - SDF03N80 MOSFET specs
SDF03N80 cross reference
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