SDF03N80 Datasheet and Replacement
Type Designator: SDF03N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220F
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SDF03N80 Datasheet (PDF)
sdf03n80 sdp03n80.pdf
SDP03N80SDF03N80aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.800V 3.0A 3.3 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | SFFX054Z | TK7P65W
Keywords - SDF03N80 MOSFET datasheet
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History: CHM85A3PAGP | SFFX054Z | TK7P65W
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