All MOSFET. FQA18N50V2 Datasheet

 

FQA18N50V2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA18N50V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO3P

 FQA18N50V2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA18N50V2 Datasheet (PDF)

 ..1. Size:624K  fairchild semi
 fqa18n50v2.pdf

FQA18N50V2 FQA18N50V2

TMQFETFQA18N50V2500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to F

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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