FQA18N50V2 Specs and Replacement
Type Designator: FQA18N50V2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
Package: TO3P
FQA18N50V2 substitution
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FQA18N50V2 datasheet
fqa18n50v2.pdf
TM QFET FQA18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F... See More ⇒
Detailed specifications: SDK03N04, SDF18N50, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, SDD07N65, MMIS60R580P, FQA19N20C, FQA38N30, FQB46N15, FQI46N15, FQP10N50CF, FDB86366F085, FCH077N65FF085, FCH190N65FF085
Keywords - FQA18N50V2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: CSD87331Q3D
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