All MOSFET. FQA18N50V2 Datasheet

 

FQA18N50V2 Datasheet and Replacement


   Type Designator: FQA18N50V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
   Package: TO3P
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FQA18N50V2 Datasheet (PDF)

 ..1. Size:624K  fairchild semi
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FQA18N50V2

TMQFETFQA18N50V2500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to F

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History: PJS6416 | IRLR024 | CED05N8 | BUZ84 | AM4407PE | AON6794 | BL10N70-A

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