FQB46N15 Datasheet and Replacement
Type Designator: FQB46N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 45.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 320 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: D2PAK
FQB46N15 substitution
FQB46N15 Datasheet (PDF)
fqb46n15 fqi46n15.pdf
April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno
fqb46n15tm am002.pdf
April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno
Datasheet: SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , AO4468 , FQI46N15 , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N .
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