All MOSFET. 2N7006 Datasheet

 

2N7006 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7006

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 350 V

Maximum Gate-Source Voltage |Vgs|: 40 V

Maximum Drain Current |Id|: 0.32 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: MO001

2N7006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7006 Datasheet (PDF)

5.1. 2n7000r3.pdf Size:77K _motorola

2N7006
2N7006

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 NChannel Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 2904, STYLE 22 DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO92 (TO226AA) GateSource Voltage Continuous VGS 20 Vd

5.2. 2n7002lt1.pdf Size:98K _motorola

2N7006
2N7006

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

5.3. 2n7002lt1rev2.pdf Size:94K _motorola

2N7006
2N7006

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

5.4. 2n7002ck.pdf Size:76K _philips

2N7006
2N7006

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET techn

5.5. 2n7002bkt.pdf Size:334K _philips

2N7006
2N7006

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

5.6. 2n7002p.pdf Size:311K _philips

2N7006
2N7006

2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible

5.7. 2n7002-03.pdf Size:276K _philips

2N7006
2N7006

2N7002 N-channel enhancement mode field-effect transistor Rev. 03 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: 2N7002 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applicat

5.8. 2n7002e.pdf Size:92K _philips

2N7006
2N7006

2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed

5.9. 2n7002ps.pdf Size:354K _philips

2N7006
2N7006

2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te

5.10. 2n7000-03.pdf Size:274K _philips

2N7006
2N7006

2N7000 N-channel enhancement mode field-effect transistor Rev. 03 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS technology Very fast switching Logic level compatible. 3. Applications Relay driver

5.11. 2n7002ka.pdf Size:87K _philips

2N7006
2N7006

2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge (ESD) protection diodes 1.3

5.12. 2n7002pt.pdf Size:306K _philips

2N7006
2N7006

2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology

5.13. 2n7002.pdf Size:87K _philips

2N7006
2N7006

2N7002 N-channel TrenchMOS FET Rev. 06 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed l

5.14. 2n7002pw.pdf Size:148K _philips

2N7006
2N7006

2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compati

5.15. 2n7000_2n7002.pdf Size:626K _st

2N7006
2N7006

2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectron

5.16. 2n7000bu.pdf Size:85K _fairchild_semi

2N7006
2N7006

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous

5.17. 2n7002dw.pdf Size:257K _fairchild_semi

2N7006
2N7006

October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking : 2N Absolute Maximum Ratings * Ta = 25C unless otherwise noted

5.18. 2n7002mtf.pdf Size:115K _fairchild_semi

2N7006
2N7006

N-Channel Small Signal MOSFET 2N7002MTF FEATURES BVDSS = 60 V Lower RDS(on) RDS(on) = 5.0 ? Improved Inductive Ruggedness Fast Switching Times ID = 200 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) ID 2N7002 60V 5.0? 115mA Absolute Maximum Ratings Symbol

5.19. 2n7000ta.pdf Size:84K _fairchild_semi

2N7006
2N7006

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Contin

5.20. 2n7002k.pdf Size:222K _fairchild_semi

2N7006
2N7006

January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Abso

5.21. 2n7002v-va.pdf Size:506K _fairchild_semi

2N7006
2N7006

April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking : AB Marking : AC * Pin1 and Pin4 are exchangeable. Absolu

5.22. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7006
2N7006

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

5.23. 2n7002kw.pdf Size:286K _fairchild_semi

2N7006
2N7006

May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Rati

5.24. 2n7000.pdf Size:94K _fairchild_semi

2N7006
2N7006

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

5.25. 2n7002t.pdf Size:332K _fairchild_semi

2N7006
2N7006

October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT - 523F Marking : AA Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Uni

5.26. 2n7002w.pdf Size:291K _fairchild_semi

2N7006
2N7006

February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units

5.27. 2n7000.pdf Size:443K _samsung

2N7006
2N7006

N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Curren

5.28. 2n7002.pdf Size:439K _samsung

2N7006
2N7006

N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Lower Rds(on) RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching Times ID = 115 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability 2 1 3 1.Gate 2. Drain 3. Source Product Summary Part Number BVdss Rds(on) ID 115mA 60V 2N7002 5.0 Absolute Maximum Ratings Symbo

5.29. 2n7002k.pdf Size:210K _vishay

2N7006
2N7006

2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance: 2 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET 2000 V ESD Protection

5.30. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7006
2N7006

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Lo

5.31. 2n7002e_1.pdf Size:174K _vishay

2N7006
2N7006

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance: 3 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directive 2002/95/EC BENEFIT

5.32. 2n7000kl_bs170kl.pdf Size:93K _vishay

2N7006
2N7006

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays, Solenoids, Lam

5.33. 2n7002dw.pdf Size:84K _diodes

2N7006
2N7006

2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals: Matte Tin Finish an

5.34. 2n7002k.pdf Size:161K _diodes

2N7006
2N7006

2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish ? Matte Tin annealed over Alloy 42

5.35. 2n7002a.pdf Size:147K _diodes

2N7006
2N7006

2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Capacitance Ter

5.36. 2n7002e.pdf Size:78K _diodes

2N7006
2N7006

2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Pla

5.37. 2n7002t.pdf Size:77K _diodes

2N7006
2N7006

2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Solderable per MIL-STD-202

5.38. 2n7002.pdf Size:86K _diodes

2N7006
2N7006

2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed ov

5.39. 2n7002w.pdf Size:120K _diodes

2N7006
2N7006

2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD

5.40. 2n7002vc-vac.pdf Size:124K _diodes

2N7006
2N7006

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminal Connections: Se

5.41. 2n7002.pdf Size:257K _mcc

2N7006
2N7006

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2N7002 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Advanced Trench Process Technology High Input Impedance N-Channel MOSFET High Speed Switching CMOS Logic Compatible Input Marking : 70

5.42. 2n7002w.pdf Size:182K _mcc

2N7006
2N7006

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating

5.43. 2n7002e_2.pdf Size:95K _onsemi

2N7006
2N7006

2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) http://onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits Simpli

5.44. 2n7002l.pdf Size:92K _onsemi

2N7006
2N7006

2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features AEC Qualified http://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vd

5.45. 2n7000g.pdf Size:92K _onsemi

2N7006
2N7006

2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com AEC Qualified 200 mAMPS PPAP Capable 60 VOLTS This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS 20 Vdc S - Non-repetiti

5.46. 2n7008.pdf Size:326K _supertex

2N7006
2N7006

2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description The Supertex 2N7008 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertexs well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > L

5.47. 2n7007.pdf Size:20K _supertex

2N7006
2N7006

2N7007 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-92 240V 45? 150mA 2N7007 Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a Free from secondary breakdown vertical DMOS structure and Supertexs well-proven silicon-gate Low power drive requirement manuf

5.48. 2n7002dw.pdf Size:285K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Contr

5.49. 2n7002k.pdf Size:159K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = t

5.50. 2n7002zdw.pdf Size:171K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS

5.51. 2n7002zt.pdf Size:159K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS =

5.52. 2n7002ll.pdf Size:160K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5? @VGS

5.53. 2n7000z.pdf Size:150K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is part

5.54. 2n7000.pdf Size:355K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low volta

5.55. 2n7002t.pdf Size:173K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled S

5.56. 2n7002.pdf Size:286K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Smal

5.57. 2n7002z.pdf Size:178K _utc

2N7006
2N7006

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <7.5? * Low Reverse Transfer Capacita

5.58. 2n7002w.pdf Size:153K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage

5.59. 2n7002k.pdf Size:237K _auk

2N7006
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2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002K 7K2 ? SOT-

5.60. 2n7000k.pdf Size:201K _auk

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2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packag

5.61. 2n7002ku.pdf Size:241K _auk

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2N7002KU N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-323 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002KU 7K2 ? S

5.62. 2n7002b.pdf Size:237K _auk

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2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 2000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002B 7B2 ? SOT-

5.63. 2n7002k.pdf Size:527K _secos

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2N7002K 0.3A , 60V , RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A L ? Advanced Trench Process Technology 3 3 ? High Density Cell Design For Ultra Low On-Resistance Top View C

5.64. s2n7002w.pdf Size:87K _secos

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S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B

5.65. 2n7002kdw.pdf Size:425K _secos

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2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A ? Low on-resistance E L ? Fast switching Speed 6 5 4 ? Low-voltage drive ? Easily designed drive circuits B ? ESD protected:2000V 1 2 3 F C H 6 5 4 MECHANICAL DATA J D2 G1 S1 D G K ? Case:

5.66. s2n7002dw.pdf Size:247K _secos

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S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA ? Case: SOT-363,Molded Plastic. ? Case Material-UL Flammability Rating 94V-0 ? Terminals: Solderable per MIL-STD-202, Method 208 ? Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Pa

5.67. s2n7002.pdf Size:82K _secos

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S2N7002 115 mA, 60 V, RDS(ON) = 7.5 ? Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A L FEATURES 3 3 Pb-Free Package is Available Top View C B PACKAGING INFORMATION 1 1 2 2 K E Drain Drain 3 3 D H J F G 702 W 1 Millimeter Millimeter REF. REF. Min. Max. Min. Max.

5.68. 2n7002kw.pdf Size:527K _secos

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2N7002KW 115mA , 60V, RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A ? Advanced Trench Process Technology L ? High Density Cell Design For Ultra Low On-Resistance 3 3 ? Very Lo

5.69. s2n7002k.pdf Size:1005K _secos

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S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of “-C” specifies halogen & lead-free A L 3 3 Top View C B FEATURES 1 1 2 3 DRAIN 2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1 H J F G GATE * Easily designed drive circuits. Easy to parallel. *

5.70. 2n7000.pdf Size:358K _secos

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2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A

5.71. 2n7002t.pdf Size:283K _secos

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2N7002T 0.115A , 60V , RDS(ON) 7.2? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES ? High density cell design for low RDS(ON). A ? Voltage controlled small signal switch. M ? Rugged and reliable. 3 3 ? High saturation current capability. Top View C B 1 1 2 L 2 K MARKI

5.72. s2n7002kw.pdf Size:536K _secos

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S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low on-resistance Fast switching Speed A L Low-voltage drive 3 3 Easily designed drive circuits Top View C B 1 1 2 ESD protected:1500V 2 K E D H J F G Millimeter Millimeter REF. REF. Min

5.73. tsm2n7000.pdf Size:85K _taiwansemi

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5.74. tsm2n7002e_a07.pdf Size:143K _taiwansemi

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5.75. tsm2n7002_a07.pdf Size:127K _taiwansemi

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5.76. 2n7002k.pdf Size:68K _kec

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2N7002K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ESD Protected 2000V. DIM MILLIMETERS High density cell design for low RDS(ON). _ A + 2.93 0.20 B 1.30+0.20/-0.15 Voltage controlled small signal switch. C 1.30 MAX 2 3 Rugged and reliable. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High saturation current

5.77. 2n7002a.pdf Size:51K _kec

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2N7002A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controolled small signal switch. _ A + 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-

5.78. 2n7000.pdf Size:63K _kec

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2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATIN

5.79. 2n7002ka.pdf Size:552K _kec

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2N7002KA SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ·ESD Protected 2000V. DIM MILLIMETERS _ + ·High density cell design for low RDS(ON). A 2.93 0.20 B 1.30+0.20/-0.15 ·Voltage controlled small signal switch. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Rugged and reliable. E 2.40+0.30/-0.20 1 G 1.90 ·Hig

5.80. 2n7002.pdf Size:65K _kec

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2N7002 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controlled small signal switch. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-0.

5.81. 2n7000k.pdf Size:67K _kec

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2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.4

5.82. 2n7000a.pdf Size:61K _kec

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2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAX

5.83. 2n7004.pdf Size:237K _siliconix

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5.84. 2n7000.pdf Size:239K _lge

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2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 2

5.85. 2n7002.pdf Size:224K _lge

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2N7002 Mosfet (N-Channel) SOT-23 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: 7002 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Dr

5.86. 2n7002w.pdf Size:241K _lge

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2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID

5.87. 2n7002dw.pdf Size:212K _wietron

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2N7002DW Dual N-Channel MOSFET 6 5 4 1 2 3 Features: * We declare that the material of product are Halogen Free and SOT-363(SC-88) compliance with RoHS requirements. * ESD Protected:1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage RGS<1.0M? _ VDGR 60 V Gate-Sour

5.88. 2n7002k.pdf Size:335K _wietron

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2N7002K N-Channel Enhancement 3 DRAIN Mode Power MOSFET 3 1 P b Lead(Pb)-Free 1 GATE * 2 * Gate Pretection Diode SOURCE 2 SOT-23 Features: * Low on-resistance. * Fast switching speed. * Low-voltage drive. * Easily designed drive circuits. * Easy to parallel. * Pb-Free package is available. * Esd Protected:2000V Maximum Ratings(T = 25? Unless Otherwise Specified) A Para

5.89. 2n7002kdw.pdf Size:161K _wietron

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2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead(Pb)-Free 4 1 2 3 Features: * Low On-Resistance SOT-363(SC-88) * Fast Switching Speed * Low-voltage drive 6 5 4 * Easily designed drive circuits D2 G1 S1 * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 S2 G2 D1 *Terminals: Solderable per MIL-STD-202, Method 208 1 2 3

5.90. 2n7002kt.pdf Size:626K _wietron

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2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed Drain * Low On-Resistance * Low Voltage Driver 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits 1 (Top View) 2 * Load/Power Switching Cell

5.91. 2n7000.pdf Size:168K _wietron

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WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source

5.92. 2n7002t.pdf Size:287K _wietron

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2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET 3 1. GATE 1 P b Lead(Pb)-Free 2 2. SOURCE 3. DRAIN SOT-523(SC-75) FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers Maximum R

5.93. 2n7002.pdf Size:298K _wietron

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WEITRON 2N7002 Small Signal MOSFET 3 DRAIN N-Channel 3 P b Lead(Pb)-Free 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (T =25°C Unless Otherwise Specified) A Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0M?) VDGR 60 V ±115 Drain Current ID Continuous TC = 25°C (Note 1.) ±75 ID mA – Con tinuous IDM ±800 TC= 100°C (Note 1.) Pulsed

5.94. 2n7002w.pdf Size:359K _wietron

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2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous

5.95. 2n7002lt1.pdf Size:370K _willas

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FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N

5.96. 2n7002elt1.pdf Size:382K _willas

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FM120-M WILLAS 2N7002ELT1 THRU Small Signal MOSFET 310 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounte N–Channel SOT–23d appli

5.97. 2n7002wt1.pdf Size:368K _willas

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FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Chann

5.98. 2n7002t.pdf Size:412K _willas

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FM120-M WILLAS THRU 2N7002T SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H MOSFET (N-Channel) nted application in order to • Low profile

5.99. 2n7002nt1.pdf Size:429K _willas

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FM120-M WILLAS THRU 2N7002NT1 30 V, 154 mA, Single, N-Channel, Gate FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ESD Protection, SC-89 SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted applica

5.100. 2n7002dw1t1.pdf Size:375K _willas

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FM120-M WILLAS THRU 2N7002DW1T1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Small Signal MOSFET 115 mAmps,60 Volts SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers N–Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted applic

5.101. h2n7002k.pdf Size:136K _hsmc

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Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................

5.102. h2n7002ksn.pdf Size:156K _hsmc

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Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-S

5.103. h2n7000.pdf Size:51K _hsmc

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Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Tempera

5.104. h2n7002sn.pdf Size:114K _hsmc

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Spec. No. : MOS200605 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002SN Pin Assignment & Symbol H2N7002SN 3 3-Lead Plastic SOT-323 Package Code: SN N-Channel MOSFET (60V, 0.2A) Pin 1: Gate 2: Source 3: Drain 2 1 D Description G N-channel enhancement-mode MOS transistor. S Absolute Maximum Ratings Drain-Source Voltag

5.105. h2n7002.pdf Size:129K _hsmc

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Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ...................................................................................................................

5.106. ap2n7002k-hf.pdf Size:58K _a-power

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AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Small Package Outline RDS(ON) 2? Ў Surface Mount Device ID 450mA S Ў RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex

5.107. pz2n7002m.pdf Size:487K _unikc

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PZ2N7002M N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2Ω @VGS = 10V 60V 300mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 TC = 25 ° C 300 ID Continuous Drain Current mA TC = 100 ° C 190 IDM 1 A Pulsed Drain C

5.108. 2n7002kb.pdf Size:502K _silikron

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 2N7002KB Main Product Characteristics: VDSS 60V RDS(on) 2Ω(max.) ID 0.3A Marking and pin SOT-23 Schema t ic diag r am Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

5.109. 2n7002kg8.pdf Size:459K _silikron

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 2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating t

5.110. 2n7002_sot-23.pdf Size:201K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET(N-Channel) FEATURES High density cell design for low RDS(ON) Voltage cotrolled small signal switch Rugged and reliable High saturation current capability MARKING:7002 MAXIMUM RATINGS (TA=25℃ unless otherwise noted

5.111. st2n7000.pdf Size:566K _semtech

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ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) VDGR 60 V Gate-source Voltage Continuous VGS ± 20 V VGSM ± 40 V Non-repetitive ( tp ≤ 50 μs) Drain Current Continuous

5.112. h2n7000.pdf Size:423K _shantou-huashan

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H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

5.113. 2n7002dw.pdf Size:1367K _kexin

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SMD Type MOSFET Dual N-Channel MOSFET 2N7002DW ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON) < 7.5 Ω (VGS = 5V) ● Low Input Capacitance ● Fast Switching Speed ● Low On-Resistance 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage @ RGS ≤ 1M

5.114. 2n7002k.pdf Size:1191K _kexin

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K SOT-23 Unit: mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance D rai n 1 2 Fast Switching Speed +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low Input/Output Leakage ● ESD Protected 2KV HBM Gate 1.Base 1 GATE 2.Emitter 2 SOURCE Gate Protectio

5.115. 2n7002e-3.pdf Size:1214K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 +0.02 Low Input Capacitance +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol

5.116. 2n7002e.pdf Size:1201K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 Low Input Capacitance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Ra

5.117. 2n7002-3.pdf Size:936K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings

5.118. 2n7002te.pdf Size:398K _kexin

2N7006

SMD Type MOSFET N-Channel MOSFET 2N7002TE SOT-523 Unit:mm +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 2 1 ■ Features ● VDS (V) = 60V ● ID = 0.29 A 3 ● RDS(ON) < 2Ω (VGS = 20V) 0.3±0.05 +0.1 0.5 -0.1 ● RDS(ON) < 7.5Ω (VGS = 5V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source

5.119. 2n7002k-3.pdf Size:1213K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance 1 2 D rai n +0.02 +0.1 0.15 -0.02 0.95 -0.1 Fast Switching Speed +0.1 1.9-0.2 Low Input/Output Leakage ● ESD Protected 2KV HBM Gate 1.Base 1 GATE 2.Emitter 2 SOURCE Gate Protect

5.120. 2n7002t.pdf Size:1085K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel MOSFET 2N7002T SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 2 1 ■ Features ● VDS (V) = 60V ● ID = 115mA 3 ● RDS(ON) < 5Ω (VGS = 10V) 0.3±0.05 ● RDS(ON) < 7Ω (VGS = 5V) +0.1 0.5-0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25℃ ■ Parameter Symbol Rating Unit Drain-Source

5.121. 2n7002.pdf Size:925K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=2

5.122. 2n7002w.pdf Size:1286K _kexin

2N7006
2N7006

SMD Type MOSFET N-Channel MOSFET 2N7002W ■ Features ● VDS (V) = 60V ● ID = 0.34 A (VGS = 10V) ● RDS(ON) < 1.6Ω (VGS = 10V) ● RDS(ON) < 2.5Ω (VGS = 4.5V) ● ESD Protected 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Ta=25℃ 310 Continuous Drain C

5.123. 2n7002k.pdf Size:814K _shenzhen-tuofeng-semi

2N7006
2N7006

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002K N-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features · Low On-Resistance · Low Input Capacitance · Fast Switching Speed · Low Input/Output Leakage · ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol

Datasheet: 2N6969JANTXV , 2N7000 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , IRFP250 , 2N7007 , 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 .

 


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