FDZ663P MOSFET Datasheet: P-Ch, 20V, 2.7A. Full specification with pinout and replacement list

FDZ663P Specs and Replacement

Type Designator: FDZ663P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.2 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.134 Ohm

Package: WLCSP

FDZ663P substitution

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FDZ663P datasheet

..1. Size:255K fairchild semi
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December 2011 FDZ663P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 171 m at VGS = -2.5 V, ID = -1.5 A the FDZ663P minimizes bo... See More ⇒

9.1. Size:268K fairchild semi
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December 2011 FDZ661PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 m Features General Description Max rDS(on) = 140 m at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 182 m at VGS = -2.5 V, ID = -1.5 A the FDZ661PZ minimizes ... See More ⇒

9.2. Size:1440K onsemi
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