All MOSFET. FDZ663P Datasheet

 

FDZ663P Datasheet and Replacement


   Type Designator: FDZ663P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.134 Ohm
   Package: WLCSP
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FDZ663P Datasheet (PDF)

 ..1. Size:255K  fairchild semi
 fdz663p.pdf pdf_icon

FDZ663P

December 2011FDZ663PP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 171 m at VGS = -2.5 V, ID = -1.5 Athe FDZ663P minimizes bo

 9.1. Size:268K  fairchild semi
 fdz661pz.pdf pdf_icon

FDZ663P

December 2011FDZ661PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mFeatures General Description Max rDS(on) = 140 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 182 m at VGS = -2.5 V, ID = -1.5 Athe FDZ661PZ minimizes

 9.2. Size:1440K  onsemi
 fdz661pz.pdf pdf_icon

FDZ663P

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STD10N10LT4 | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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