All MOSFET. HUF75343S3S Datasheet

 

HUF75343S3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75343S3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 270 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 205 nC

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO263AB

HUF75343S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF75343S3S Datasheet (PDF)

1.1. huf75343s3 huf75343s3st.pdf Size:280K _update_mosfet

HUF75343S3S
HUF75343S3S

HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and

2.1. huf75343.pdf Size:205K _fairchild_semi

HUF75343S3S
HUF75343S3S

HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode

 3.1. huf75345s3 huf75345s3st.pdf Size:326K _update_mosfet

HUF75343S3S
HUF75343S3S

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models

3.2. huf75344a3.pdf Size:430K _update_mosfet

HUF75343S3S
HUF75343S3S

October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced • RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan

 3.3. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi

HUF75343S3S
HUF75343S3S

HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th

3.4. huf75344.pdf Size:142K _intersil

HUF75343S3S
HUF75343S3S

HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S

 3.5. huf75345s3st.pdf Size:254K _inchange_semiconductor

HUF75343S3S
HUF75343S3S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor HUF75345S3ST ·DESCRIPTION ·Drain Current: I = 75A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM

Datasheet: HUF75337S3S , HUF75339G3 , HUF75339P3 , HUF75339S3 , HUF75339S3S , HUF75339S3ST , HUF75343G3 , HUF75343P3 , SPA11N60C3 , HUF75344G3 , HUF75344P3 , HUF75344S3S , HUF75345G3 , HUF75345P3 , HUF75345S3S , HUF75545P3 , HUF75545S3S .

 

 
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