FCPF190N60 PDF and Equivalents Search

 

FCPF190N60 PDF Specs and Replacement


   Type Designator: FCPF190N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO220F
 

 FCPF190N60 substitution

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FCPF190N60 PDF Specs

 ..1. Size:650K  fairchild semi
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FCPF190N60

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5... See More ⇒

 ..2. Size:888K  onsemi
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FCPF190N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:248K  inchange semiconductor
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FCPF190N60

isc N-Channel MOSFET Transistor FCPF190N60 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

 0.1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCPF190N60

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg... See More ⇒

Detailed specifications: FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , SPP20N60C3 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L .

Keywords - FCPF190N60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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