FCPF190N60 - описание и поиск аналогов

 

FCPF190N60. Аналоги и основные параметры

Наименование производителя: FCPF190N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 39 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 1630 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm

Тип корпуса: TO220F

Аналог (замена) для FCPF190N60

- подборⓘ MOSFET транзистора по параметрам

 

FCPF190N60 даташит

 ..1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdfpdf_icon

FCPF190N60

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 ..2. Size:888K  onsemi
fcp190n60 fcpf190n60.pdfpdf_icon

FCPF190N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:248K  inchange semiconductor
fcpf190n60.pdfpdf_icon

FCPF190N60

isc N-Channel MOSFET Transistor FCPF190N60 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 0.1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdfpdf_icon

FCPF190N60

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

Другие MOSFET... FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , SPP20N60C3 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L .

History: FDP2D3N10C

 

 

 

 

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