Справочник MOSFET. FCPF190N60

 

FCPF190N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FCPF190N60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1630 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

FCPF190N60 Datasheet (PDF)

 ..1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdfpdf_icon

FCPF190N60

December 2013FCP190N60 / FCPF190N60N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 ..2. Size:888K  onsemi
fcp190n60 fcpf190n60.pdfpdf_icon

FCPF190N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:248K  inchange semiconductor
fcpf190n60.pdfpdf_icon

FCPF190N60

isc N-Channel MOSFET Transistor FCPF190N60FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 0.1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdfpdf_icon

FCPF190N60

December 2013FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 20.6 A, 190 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

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History: NTTFS4824NTAG | RU1HL8L | KRF7703 | IXTH10N60 | UPA1770 | TSM4946DCS | STM6960

 

 
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