All MOSFET. FDMC86116LZ Datasheet

 

FDMC86116LZ Datasheet and Replacement


   Type Designator: FDMC86116LZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm
   Package: MLP3.3X3.3
 

 FDMC86116LZ substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDMC86116LZ Datasheet (PDF)

 ..1. Size:381K  1
fdmc86116lz.pdf pdf_icon

FDMC86116LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:318K  fairchild semi
fdmc86116lz.pdf pdf_icon

FDMC86116LZ

November 2013FDMC86116LZN-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 Athat incorporates Shielded Gate technology. This process has Max r

 7.1. Size:195K  fairchild semi
fdmc86160.pdf pdf_icon

FDMC86116LZ

September 2014FDMC86160N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

 7.2. Size:313K  fairchild semi
fdmc86102l.pdf pdf_icon

FDMC86116LZ

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

Datasheet: FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , IRFB3607 , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S .

History: FDMC8321L | SMF14N65 | NCEP2390D | IRF8736PBF-1 | FQA19N20C | MMFTN123 | STB170NF04

Keywords - FDMC86116LZ MOSFET datasheet

 FDMC86116LZ cross reference
 FDMC86116LZ equivalent finder
 FDMC86116LZ lookup
 FDMC86116LZ substitution
 FDMC86116LZ replacement

 

 
Back to Top

 


 
.