FDMC86116LZ - описание и поиск аналогов

 

FDMC86116LZ. Аналоги и основные параметры

Наименование производителя: FDMC86116LZ

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.3 ns

Cossⓘ - Выходная емкость: 45 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.103 Ohm

Тип корпуса: MLP3.3X3.3

Аналог (замена) для FDMC86116LZ

- подборⓘ MOSFET транзистора по параметрам

 

FDMC86116LZ даташит

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fdmc86116lz.pdfpdf_icon

FDMC86116LZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:318K  fairchild semi
fdmc86116lz.pdfpdf_icon

FDMC86116LZ

November 2013 FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A that incorporates Shielded Gate technology. This process has Max r

 7.1. Size:195K  fairchild semi
fdmc86160.pdfpdf_icon

FDMC86116LZ

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

 7.2. Size:313K  fairchild semi
fdmc86102l.pdfpdf_icon

FDMC86116LZ

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof

Другие MOSFET... FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , K4145 , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S .

History: IRFH5215 | IRFB5615 | FQA18N50V2

 

 

 

 

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