FDMS3626S PDF and Equivalents Search

 

FDMS3626S Specs and Replacement

Type Designator: FDMS3626S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 448 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PQFN5X6

FDMS3626S substitution

- MOSFET ⓘ Cross-Reference Search

 

FDMS3626S datasheet

 ..1. Size:388K  fairchild semi
fdms3626s.pdf pdf_icon

FDMS3626S

December 2011 FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

 ..2. Size:447K  onsemi
fdms3626s.pdf pdf_icon

FDMS3626S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:389K  fairchild semi
fdms3624s.pdf pdf_icon

FDMS3626S

December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

 7.2. Size:397K  fairchild semi
fdms3622s.pdf pdf_icon

FDMS3626S

December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

Detailed specifications: FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , 5N65 , FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC .

Keywords - FDMS3626S MOSFET specs

 FDMS3626S cross reference
 FDMS3626S equivalent finder
 FDMS3626S pdf lookup
 FDMS3626S substitution
 FDMS3626S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.