FDMS3626S - описание и поиск аналогов

 

FDMS3626S. Аналоги и основные параметры

Наименование производителя: FDMS3626S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2 ns

Cossⓘ - Выходная емкость: 448 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS3626S

- подборⓘ MOSFET транзистора по параметрам

 

FDMS3626S даташит

 ..1. Size:388K  fairchild semi
fdms3626s.pdfpdf_icon

FDMS3626S

December 2011 FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 ..2. Size:447K  onsemi
fdms3626s.pdfpdf_icon

FDMS3626S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:389K  fairchild semi
fdms3624s.pdfpdf_icon

FDMS3626S

December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.2. Size:397K  fairchild semi
fdms3622s.pdfpdf_icon

FDMS3626S

December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

Другие MOSFET... FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , 5N65 , FDMC8010 , FDMC8321L , FDMS86520 , FDMS3622S , FDMS3624S , FDD86113LZ , FDMS8320L , FDMS86500DC .

History: FDMS8050 | FCP104N60

 

 

 

 

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