FDMS86500DC
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS86500DC
Marking Code: 86500
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 29
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 76
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 1605
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023
Ohm
Package:
PQFN5X6
FDMS86500DC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS86500DC
Datasheet (PDF)
..1. Size:396K fairchild semi
fdms86500dc.pdf
July 2013FDMS86500DCN-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at
5.1. Size:505K 1
fdms86500l.pdf
FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),
5.2. Size:277K fairchild semi
fdms86500l.pdf
March 2011FDMS86500LN-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 Aringing of DC/DC converters using either synchronous or Advanced Pac
5.3. Size:505K onsemi
fdms86500l.pdf
FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),
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