July 2013FDMS86500DCN-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),

March 2011FDMS86500LN-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 Aringing of DC/DC converters using either synchronous or Advanced Pac

FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),