FDMS86101DC Specs and Replacement
Type Designator: FDMS86101DC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 467 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: PQFN5X6
FDMS86101DC substitution
- MOSFET ⓘ Cross-Reference Search
FDMS86101DC datasheet
fdms86101dc.pdf
July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5... See More ⇒
fdms86101dc.pdf
MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to ... See More ⇒
fdms86101.pdf
MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max... See More ⇒
fdms86101a.pdf
October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat... See More ⇒
Detailed specifications: FCP380N60E , FCPF190N60E , FCPF380N60E , FDMS86310 , FDMS3006SDC , FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , IRF2807 , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S .
History: FDMS86101A | FDMC86320 | FDMS86520 | FDMS015N04B | FDMS86540 | FCP380N60
Keywords - FDMS86101DC MOSFET specs
FDMS86101DC cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDMS86101A | FDMC86320 | FDMS86520 | FDMS015N04B | FDMS86540 | FCP380N60
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