All MOSFET. FDMS86101DC Datasheet

 

FDMS86101DC Datasheet and Replacement


   Type Designator: FDMS86101DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 467 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PQFN5X6
 

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FDMS86101DC Datasheet (PDF)

 ..1. Size:407K  fairchild semi
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FDMS86101DC

July 2013FDMS86101DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET100 V, 60 A, 7.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

 ..2. Size:468K  onsemi
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FDMS86101DC

MOSFET - N-Channel,POWERTRENCH), DUALCOOL) 56 Shielded Gate100 V, 60 A, 7.5 mWFDMS86101DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process that ELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconS Dand DUAL COOL package technologies have been combined to

 5.1. Size:480K  1
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FDMS86101DC

MOSFET - NChannel,POWERTRENCH)100 V, 60 A, 8 mWFDMS86101General DescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been especiallytailored to minimize the on-state resistance and yet maintain superiorswitching performance.SDFeaturesDS Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

 5.2. Size:317K  fairchild semi
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FDMS86101DC

October 2014FDMS86101AN-Channel Shielded Gate PowerTrench MOSFET100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aincorporates Shielded Gate technology. This process has been optimized for the on-stat

Datasheet: FCP380N60E , FCPF190N60E , FCPF380N60E , FDMS86310 , FDMS3006SDC , FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , IRFB31N20D , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S .

History: JCS10N70C | R5205CND | NCEP85T14

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