FDMS86101DC - описание и поиск аналогов

 

FDMS86101DC. Аналоги и основные параметры

Наименование производителя: FDMS86101DC

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.2 ns

Cossⓘ - Выходная емкость: 467 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS86101DC

- подборⓘ MOSFET транзистора по параметрам

 

FDMS86101DC даташит

 ..1. Size:407K  fairchild semi
fdms86101dc.pdfpdf_icon

FDMS86101DC

July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

 ..2. Size:468K  onsemi
fdms86101dc.pdfpdf_icon

FDMS86101DC

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to

 5.1. Size:480K  1
fdms86101.pdfpdf_icon

FDMS86101DC

MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

 5.2. Size:317K  fairchild semi
fdms86101a.pdfpdf_icon

FDMS86101DC

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat

Другие MOSFET... FCP380N60E , FCPF190N60E , FCPF380N60E , FDMS86310 , FDMS3006SDC , FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , IRF2807 , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S .

 

 

 

 

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