FDMS86101DC. Аналоги и основные параметры
Наименование производителя: FDMS86101DC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 3.2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.2 ns
Cossⓘ - Выходная емкость: 467 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS86101DC
- подборⓘ MOSFET транзистора по параметрам
FDMS86101DC даташит
fdms86101dc.pdf
July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5
fdms86101dc.pdf
MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to
fdms86101.pdf
MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max
fdms86101a.pdf
October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat
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