FDMS86101DC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS86101DC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8.2 ns
Cossⓘ - Выходная емкость: 467 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: PQFN5X6
- подбор MOSFET транзистора по параметрам
FDMS86101DC Datasheet (PDF)
fdms86101dc.pdf

July 2013FDMS86101DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET100 V, 60 A, 7.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5
fdms86101dc.pdf

MOSFET - N-Channel,POWERTRENCH), DUALCOOL) 56 Shielded Gate100 V, 60 A, 7.5 mWFDMS86101DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process that ELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconS Dand DUAL COOL package technologies have been combined to
fdms86101.pdf

MOSFET - NChannel,POWERTRENCH)100 V, 60 A, 8 mWFDMS86101General DescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been especiallytailored to minimize the on-state resistance and yet maintain superiorswitching performance.SDFeaturesDS Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max
fdms86101a.pdf

October 2014FDMS86101AN-Channel Shielded Gate PowerTrench MOSFET100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aincorporates Shielded Gate technology. This process has been optimized for the on-stat
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: P0603BVG | 6HP04MH | STP20N95K5 | HMS80N85D | DMG8822UTS | RJK0631JPE | AO4720
History: P0603BVG | 6HP04MH | STP20N95K5 | HMS80N85D | DMG8822UTS | RJK0631JPE | AO4720



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