FDME820NZT MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDME820NZT
   Marking Code: 8T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: MICROFET1.6X1.6

FDME820NZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS