FDME820NZT MOSFET Datasheet: N-Ch, 20V, 9A. Full specification with pinout and replacement list

FDME820NZT Specs and Replacement

Type Designator: FDME820NZT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 203 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: MICROFET1.6X1.6

FDME820NZT substitution

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FDME820NZT datasheet

..1. Size:256K fairchild semi
fdme820nzt.pdf pdf_icon

October 2013 FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m... See More ⇒

..2. Size:723K onsemi
fdme820nzt.pdf pdf_icon

FDME820NZT N-Channel PowerTrench MOSFET General Description 20 V, 9 A, 18 m This Single N-Channel MOSFET has been designed using Features ON Semiconductor s advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG... See More ⇒

Detailed specifications: FCPF400N60, FDD86540, FDMS015N04B, FDD390N15ALZ, FDMA7628, FDMC86248, FDPC8013S, FDP039N08B, AON7403, FDS86540, FDPF18N20FTG, HUF76633P3F085, FDMS030N06B, FDMA3027PZ, FDP053N08B, FCB20N60FF085, FDMS8570SDC