All MOSFET. FDMS8570SDC Datasheet

 

FDMS8570SDC Datasheet and Replacement


   Type Designator: FDMS8570SDC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 662 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PQFN5X6
 

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FDMS8570SDC Datasheet (PDF)

 ..1. Size:397K  fairchild semi
 fdms8570sdc.pdf pdf_icon

FDMS8570SDC

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

 5.1. Size:290K  fairchild semi
 fdms8570s.pdf pdf_icon

FDMS8570SDC

November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te

 8.1. Size:405K  fairchild semi
 fdms8558sdc.pdf pdf_icon

FDMS8570SDC

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

 8.2. Size:325K  fairchild semi
 fdms8558s.pdf pdf_icon

FDMS8570SDC

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

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Datasheet: FDME820NZT , FDS86540 , FDPF18N20FTG , HUF76633P3F085 , FDMS030N06B , FDMA3027PZ , FDP053N08B , FCB20N60FF085 , 5N50 , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , FDMQ86530L , FDB035AN06F085 .

Keywords - FDMS8570SDC MOSFET datasheet

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