FDMS8570SDC - Даташиты. Аналоги. Основные параметры

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te