FDMS8570SDC
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMS8570SDC
Маркировка: 10DC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 28
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 42
nC
trⓘ -
Время нарастания: 4
ns
Cossⓘ - Выходная емкость: 662
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028
Ohm
Тип корпуса:
PQFN5X6
Аналог (замена) для FDMS8570SDC
FDMS8570SDC
Datasheet (PDF)
..1. Size:397K fairchild semi
fdms8570sdc.pdf 
July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2
5.1. Size:290K fairchild semi
fdms8570s.pdf 
November 2014FDMS8570SN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 4.5 V, ID = 22 AAdvancements in both silicon and package technologies have High performance te
8.1. Size:405K fairchild semi
fdms8558sdc.pdf 
July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3
8.2. Size:325K fairchild semi
fdms8558s.pdf 
October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,
8.3. Size:295K fairchild semi
fdms8560s.pdf 
November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te
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