All MOSFET. FDT1600N10ALZ Datasheet

 

FDT1600N10ALZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDT1600N10ALZ
   Marking Code: 16010ALZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10.42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT223

 FDT1600N10ALZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDT1600N10ALZ Datasheet (PDF)

 ..1. Size:743K  fairchild semi
 fdt1600n10alz.pdf

FDT1600N10ALZ FDT1600N10ALZ

November 2013FDT1600N10ALZN-Channel PowerTrench MOSFET100 V, 5.6 A, 160 mFeatures Description RDS(on) = 121 m (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 156 m (Typ.) @ VGS = 5 V, ID = 1.8 Alored to minimize the on-state resistance and maintain superi

 ..2. Size:850K  onsemi
 fdt1600n10alz.pdf

FDT1600N10ALZ FDT1600N10ALZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 3.1. Size:1411K  cn vbsemi
 fdt1600n10a.pdf

FDT1600N10ALZ FDT1600N10ALZ

FDT1600N10Awww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RUH30J85M

 

 
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